silicon epitaxial layer

См. также в других словарях:

• Silicon on sapphire — (SOS) is a hetero epitaxial process for integrated circuit manufacturing that consists of a thin layer (typically thinner than 0.6 micrometres) of silicon grown on a sapphire (Al2O3) wafer. SOS is part of the Silicon on Insulator (SOI) family of… …   Wikipedia

• Hybrid silicon laser — A hybrid silicon laser is a semiconductor laser fabricated from both silicon and group III V semiconductor materials. The hybrid silicon laser was developed to address the lack of a silicon laser to enable fabrication of low cost, mass producible …   Wikipedia

• Epitaxy — refers to the method of depositing a monocrystalline film on a monocrystalline substrate. The deposited film is denoted as epitaxial film or epitaxial layer. The term epitaxy comes from a Greek root ( epi above and taxis in ordered manner ) which …   Wikipedia

• Power MOSFET — A Power MOSFET is a specific type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed to handle large power. Compared to the other power semiconductor devices (IGBT, Thyristor...), its main advantages are high commutation speed …   Wikipedia

• MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up …   Wikipedia

• epitaxy — /ep i tak see/, n., pl. epitaxies. Crystall. epitaxis. * * * ▪ crystallography       the process of growing a crystal of a particular orientation on top of another crystal, where the orientation is determined by the underlying crystal. The… …   Universalium

• Charge-coupled device — A specially developed CCD used for ultraviolet imaging in a wire bonded package. A charge coupled device (CCD) is a device for the movement of electrical charge, usually from within the device to an area where the charge can be manipulated, for… …   Wikipedia

• Diffraction topography — (short: topography ) is an X ray imaging technique based on Bragg diffraction. Diffraction topographic images ( topographs ) record the intensity profile of a beam of X rays (or, sometimes, neutrons) diffracted by a crystal. A topograph thus… …   Wikipedia

• Mercury probe — The Mercury Probe is an electrical probing device to make rapid, non destructive contact to a sample for electrical characterization. Its primary application is semiconductor measurements where time consuming metallizations or photolithographic… …   Wikipedia

• Metalorganic vapour phase epitaxy — (MOVPE), also known as organometallic vapour phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method of epitaxial growth of materials, especially compound semiconductors from the surface… …   Wikipedia

• Epiwafer — An epiwafer is a wafer of semiconducting material made by epitaxial growth (called epitaxy) for use in making microelectronic devices such as light emitting diodes (LEDs). Two methods of growing the epitaxial layer on existing silicon or other… …   Wikipedia